BRB70R1K2

描述 / Descriptions
TO-263 塑封封装超结 N 沟道功率 MOS 场效应管。 Super Junction N-Channel Power MOSFET in a TO-263 Plastic Package.
特征 / Features
超低 RDS(ON)=1.2Ω@VGS=10V，超低栅电荷 Qg=8.9nCtyp,开关速度快。 Ultra Low RDS(ON) =1.2Ω@VGS =10V,Ultra Low Gate Charge, Qg=8.9nC typ, Fast switching capability。
用途 / Applications
用于 TV 电源，高性能适配器，LED 灯电源。 TV Power, High Performance Charger/Adapter, LED Lighting Power.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
PIN1：G PIN 2、4：D PIN 3：S
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Drain-Source Voltage VDSS 730 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current TC=25ºC ID 4.2 A TC=125ºC 1.9 A Pulsed Drain Current (Note 2) IDM 11.3 A Avalanche Energy, Single Pulse (Note 3) EAS 125 mJ Avalanche Energy, Repetitive (Note 2) EAR 0.2 mJ Avalanche Current, Repetitive (Note 2) IAR 2.0 A Continuous Diode Forward Current IS 4.2 A Diode Pulse Current IS.PULSE 11.3 A Operating Junction Temperature TJ 150 ℃ Storage Temperature TSTG -65 to 150 ℃ Lead Temperature (Soldering, 10 sec) TLEAD 300 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. IAS = 2A, VDD = 60V, RG = 25Ω, Starting TJ = 25°C
电性能参数 / Electrical Characteristics(Ta=25℃)
参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250uA 700 V Zero Gate Voltage Drain Current IDSS VDS=700V VGS=0V 1 uA Gate-Body Leakage Current Forward IGSSF VGS=30V VDS=0V 100 nA Reverse IGSSR VGS=-30V VDS=0V -100 Gate Threshold Voltage VGS(TH) VDS=VGS ID=250uA 2.5 3.4 4.3 V Static Drain-Source On-Resistance RDS(ON) VGS=10V ID=1.5A 1.0 1.2 Ω Gate Resistance RG f=1MHz Open Drain 4.25 Ω Input Capacitance CISS VDS=25V VGS=0V f=1MHz 298 Output Capacitance COSS 316 pF Reverse Transfer Capacitance CRSS 2.0
电性能参数 / Electrical Characteristics(Ta=25℃)
参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Turn-on Delay Time td(on) VDD=400V ID=2.0A RG=10Ω VGS=10V 8 ns Rise Time tr 12 Turn-off Delay Time td(off) 10 Fall Time tf 18 Gate to Source Charge Qgs VDD=480V ID=2.0A VGS=0 to 10V 2.32 Gate to Drain Charge Qgd 4.7 nC Gate Charge Total Qg 8.9 Gate Plateau Voltage Vplateau 5.8 V Drain-Source Diode Forward Voltage VSD VGS=0V ISD=2A 0.81 1.1 V Reverse Recovery Time trr VR=100V IF=2.0A dIF/dt=98.4A/us 155. 8 ns Reverse Recovery Charge Qrr 0.89 uC Peak Reverse Recovery Current Irrm 11.3 A