BRD4N70

描述 / Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
该器件适用于适配器和充电器的功率开关电路 These devices are well suited for power switch circuit of adaptor and charger.
内部等效电路 / Equivalent Circuit

极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Drain-Source Voltage VDS 700 V Drain Current ID(Tc=25℃) 4.0 A Drain Current ID(Tc=100℃) 3.2 A Drain Current - Pulsed IDM ① 16 A Gate-Source Voltage VGS ±30 V Single Pulsed Avalanche Energy EAS ② 150 mJ Power Dissipation PD 70 W Junction Temperature Range Tj 150 ℃ Storage Temperature Range Tstg -55~150 ℃ Junction-to-Case RθJC 1.79 /W ℃ Junction-to-Ambient RθJA 62.5 /W