TO-252 塑封封装超结 N 沟道功率 MOS 场效应管。
Super Junction N-Channel Power MOSFET in a TO-252 Plastic Package.
特征 / Features
超低 RDS(ON)=1.2Ω@VGS=10V，超低栅电荷 Qg=8.9nCtyp,开关速度快。
Ultra Low RDS(ON) =1.2Ω@VGS =10V,Ultra Low Gate Charge, Qg=8.9nC typ, Fast switching capability。
用途 / Applications
用于 TV 电源，高性能适配器，LED 灯电源。
TV Power, High Performance Charger/Adapter, LED Lighting Power.
内部等效电路 / Equivalent Circuit
